| PART |
Description |
Maker |
| SST29EE020-120-4C-WH SST29LE020-250-4C-U2 SST29VE0 |
7.3728MHZ CRYSTAL -40/85''C
FLUKE-741B 120 REFURBISHED BY NEWARK
KJA 79C 79#22 PIN RECP
128Kx8 EEPROM
PSoC® Mixed-Signal Array
2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8）页模式的EEPROM
2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8）页模式EEPROM
DSUB 13X3 F PCR/A G 50OHM T 2兆位56K × 8）页模式的EEPROM
IC SMD AN2135SC CONTROLLER USB 256K X 8 EEPROM 5V, 120 ns, PDSO32
2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8）页模式的EEPROM
2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8）页模式EEPROM
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| IS41LV32256 IS41LV32256-28PQ IS41LV32256-28TQ IS41 |
x32 EDO Page Mode DRAM X32号，江户页面模式的DRAM
256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32带扩展数据输出动态RAM) 256K × 32兆位），江户内存3.3伏，100/83/66兆赫.3伏，100/83/66兆赫56K × 32带扩展数据输出动态内存）
256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
|
Integrated Silicon Solution, Inc.
|
| CY7C1363B-133AJC CY7C1363B-133AJI CY7C1363B-133AI |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 7.5 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 512K X 18 CACHE SRAM, 6.5 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA119
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 512K X 18 CACHE SRAM, 7.5 ns, PBGA119
CONNECTOR ACCESSORY
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| CY62147EV18LL-55BVXI |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 55 ns, PBGA48
|
Cypress Semiconductor Corp.
|
| CY7C1041D-12ZSXE |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
Cypress Semiconductor, Corp.
|
| CY7C1041CV33-12ZSXE |
4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V; 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
Cypress Semiconductor, Corp.
|
| CY7C1328G-133AXI |
4-Mbit (256K x 18) Pipelined DCD Sync SRAM 256K X 18 CACHE SRAM, 4 ns, PQFP100
|
Cypress Semiconductor, Corp.
|
| AB28F200BX-T90 A28F200BX-B AB28F200BX-B90 |
2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
JT 6C 6#12 PIN RECP
A28F200BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY A28F200BX - B 2兆位28K的1656K × 8）启动块闪存系列
2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
|
http://
Intel Corporation
Intel Corp.
SCHURTER AG
|
| CY7C1352G06 CY7C1352G-250AXC CY7C1352G-250AXI CY7C |
4-Mbit (256K x 18) Pipelined SRAM with NoBL⑩ Architecture
4-Mbit (256K x 18) Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor
|
| CY7C1378C-166AXC CY7C1378C-166AXI CY7C1378C-200AXC |
9-Mbit (256K x 32) Pipelined SRAM with NoBL Architecture
9-Mbit (256K x 32) Pipelined SRAM with NoBL⑩ Architecture
|
Cypress Semiconductor
|
| CY7C1379C CY7C1355C-100AXC CY7C1355C-100AXI CY7C13 |
9-Mbit (256K x 32) Flow-through SRAM with NoBL垄芒 Architecture
9-Mbit (256K x 32) Flow-through SRAM with NoBL Architecture
9-Mbit (256K x 32) Flow-through SRAM with NoBL?/a> Architecture
|
Cypress Semiconductor
|
